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2N7002LT3G

2N7002LT3G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-2N7002LT3G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 597
  • Description: 2N7002LT3G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 115A
Pin Count 3
Number of Elements 1
Power Dissipation-Max 225mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 115mA Tc
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 115mA
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Nominal Vgs 2.5 V
Feedback Cap-Max (Crss) 5 pF
Height 1.01mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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