2N7002PS,125
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2010 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Max Power Dissipation | 420mW |
| Terminal Form | GULL WING |
| Pin Count | 6 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 320mW |
| Turn On Delay Time | 3 ns |
| Power - Max | 420mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.6 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 4.5V |
| Rise Time | 4ns |
| Fall Time (Typ) | 5 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 320mA |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain to Source Breakdown Voltage | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
