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2N7002TA

DIODES INC. - 2N7002TA - MOSFET, N-KANAL, SOT-23


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-2N7002TA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 754
  • Description: DIODES INC. - 2N7002TA - MOSFET, N-KANAL, SOT-23 (Kg)

Details

Tags

Parameters
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Contact Plating Tin
Mount Surface Mount
Current - Continuous Drain (Id) @ 25°C 115mA Ta
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Rise Time 3ns
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Vgs (Max) ±20V
Pbfree Code yes
Part Status Obsolete
Fall Time (Typ) 5.6 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Turn-Off Delay Time 11 ns
Number of Terminations 3
ECCN Code EAR99
Continuous Drain Current (ID) 500mA
Resistance 7.5Ohm
Subcategory FET General Purpose Power
Threshold Voltage 2.5V
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Gate to Source Voltage (Vgs) 20V
Terminal Position DUAL
Terminal Form GULL WING
Drain to Source Breakdown Voltage 60V
Peak Reflow Temperature (Cel) 260
Nominal Vgs 2.5 V
Current Rating 115mA
Time@Peak Reflow Temperature-Max (s) 40
Feedback Cap-Max (Crss) 5 pF
Number of Elements 1
Height 1mm
Number of Channels 1
Power Dissipation-Max 330mW Ta
Element Configuration Single
Length 2.9mm
Operating Mode ENHANCEMENT MODE
Width 1.3mm
Power Dissipation 330mW
Radiation Hardening No
Turn On Delay Time 7 ns
REACH SVHC No SVHC
FET Type N-Channel
Transistor Application SWITCHING
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Rds On (Max) @ Id, Vgs 7.5 Ω @ 500mA, 10V
See Relate Datesheet

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