2PB1219AR,115
| Parameters | |
|---|---|
| Element Configuration | Single |
| Power - Max | 200mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 120MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| VCEsat-Max | 0.6 V |
| Collector-Base Capacitance-Max | 15pF |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| HTS Code | 8541.21.00.75 |
| Max Power Dissipation | 200mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 2PB1219 |
| Pin Count | 3 |
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
See Relate Datesheet
