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2SA1962RTU

2SA1962RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-2SA1962RTU
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 131
  • Description: 2SA1962RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 130W
Frequency 30MHz
Base Part Number 2SA1962
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 130W
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 17A
DC Current Gain (hFE) (Min) @ Ic, Vce 55 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage 250V
Transition Frequency 30MHz
Collector Base Voltage (VCBO) -250V
Emitter Base Voltage (VEBO) -5V
hFE Min 55
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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