2SA1962RTU
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 130W |
| Frequency | 30MHz |
| Base Part Number | 2SA1962 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 130W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 30MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 250V |
| Max Collector Current | 17A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 55 @ 1A 5V |
| Current - Collector Cutoff (Max) | 5μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Collector Emitter Breakdown Voltage | 250V |
| Transition Frequency | 30MHz |
| Collector Base Voltage (VCBO) | -250V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 55 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
