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2SA2013-TD-E

2SA2013-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-2SA2013-TD-E
  • Package: TO-243AA
  • Datasheet: PDF
  • Stock: 722
  • Description: 2SA2013-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 1.3W
Terminal Position DUAL
Terminal Form FLAT
Pin Count 3
Number of Elements 1
Element Configuration Single
Power - Max 3.5W
Transistor Application SWITCHING
Gain Bandwidth Product 360MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 340mV @ 100mA, 2A
Collector Emitter Breakdown Voltage 50V
Max Frequency 360MHz
Transition Frequency 360MHz
Collector Emitter Saturation Voltage -200mV
Max Breakdown Voltage 50V
Frequency - Transition 400MHz
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -6V
hFE Min 200
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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