2SB1216S-TL-E
| Parameters | |
|---|---|
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 130MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Frequency - Transition | 130MHz |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 70 |
| Height | 2.3mm |
| Length | 6.5mm |
| Width | 5.5mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1W |
| Terminal Form | GULL WING |
| Reach Compliance Code | not_compliant |
| Frequency | 180MHz |
| Base Part Number | 2SB1216 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
See Relate Datesheet
