Parameters | |
---|---|
Contact Plating | Copper, Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 63 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2001 |
JESD-609 Code | e2 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Copper (Sn98Cu2) |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 0.1 |
HTS Code | 8541.29.00.95 |
Subcategory | Other Transistors |
Voltage - Rated DC | -80V |
Max Power Dissipation | 1W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -4A |
Time@Peak Reflow Temperature-Max (s) | 10 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Polarity | PNP |
Element Configuration | Single |
Case Connection | COLLECTOR |
Power - Max | 1W |
Transistor Application | AMPLIFIER |
Transistor Type | PNP - Darlington |
Collector Emitter Voltage (VCEO) | 80V |
Max Collector Current | 4A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A 3V |
Current - Collector Cutoff (Max) | 100μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 4mA, 2A |
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 12MHz |
Frequency - Transition | 12MHz |
Collector Base Voltage (VCBO) | 80V |
Emitter Base Voltage (VEBO) | 7V |
hFE Min | 1000 |
VCEsat-Max | 1.5 V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |