Parameters | |
---|---|
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 1.2A, 6A |
Collector Emitter Breakdown Voltage | 150V |
Transition Frequency | 45MHz |
Frequency - Transition | 45MHz |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | 3-ESIP |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Bulk |
Published | 1999 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | BUILT-IN BIAS RESISTOR |
Max Power Dissipation | 200W |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Power - Max | 200W |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | PNP |
Transistor Type | PNP - Darlington |
Collector Emitter Voltage (VCEO) | 2.5V |
Max Collector Current | 17A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 10A 4V |
Current - Collector Cutoff (Max) | 100μA ICBO |