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2SB1689T106

2SB1689T106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-2SB1689T106
  • Package: SC-70, SOT-323
  • Datasheet: -
  • Stock: 274
  • Description: 2SB1689T106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Emitter Base Voltage (VEBO) -5V
hFE Min 270
Continuous Collector Current -1.5A
Height 900μm
Length 2.1mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Other Transistors
Voltage - Rated DC -12V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1.5A
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SB1689
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 400MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage 12V
Max Frequency 100MHz
Transition Frequency 400MHz
Collector Emitter Saturation Voltage -110mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) -15V
See Relate Datesheet

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