Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Copper, Silver, Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SC-96 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
HTS Code | 8541.21.00.75 |
Subcategory | Other Transistors |
Voltage - Rated DC | -12V |
Max Power Dissipation | 500mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -4A |
Time@Peak Reflow Temperature-Max (s) | 10 |
Base Part Number | 2SB1707 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 250MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 12V |
Max Collector Current | 4A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 40mA, 2A |
Collector Emitter Breakdown Voltage | 12V |
Max Frequency | 100MHz |
Transition Frequency | 250MHz |
Collector Emitter Saturation Voltage | -150mV |
Max Breakdown Voltage | 12V |
Collector Base Voltage (VCBO) | -15V |
Emitter Base Voltage (VEBO) | -6V |
hFE Min | 270 |
Continuous Collector Current | -4A |
Height | 900μm |
Length | 2.9mm |
Width | 1.6mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |