Parameters | |
---|---|
Factory Lead Time | 1 Week |
Surface Mount | NO |
Transistor Element Material | SILICON |
Published | 2016 |
Part Status | Active |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Position | BOTTOM |
Terminal Form | THROUGH-HOLE |
JESD-30 Code | O-PBCY-T3 |
Number of Elements | 1 |
Configuration | SINGLE |
Power Dissipation-Max | 400mW |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Collector Emitter Voltage (VCEO) | 250mV |
Max Collector Current | 150mA |
JEDEC-95 Code | TO-92 |
Collector Emitter Breakdown Voltage | 50V |
Transition Frequency | 80MHz |
Frequency - Transition | 80MHz |
DC Current Gain-Min (hFE) | 70 |
RoHS Status | RoHS Compliant |