2SC3649S-TD-E
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Max Power Dissipation | 500mW |
| Terminal Form | FLAT |
| Frequency | 120MHz |
| Base Part Number | 2SC3649 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Case Connection | COLLECTOR |
| Gain Bandwidth Product | 120MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 160V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 160V |
| Transition Frequency | 120MHz |
| Collector Emitter Saturation Voltage | 130mV |
| Max Breakdown Voltage | 160V |
| Collector Base Voltage (VCBO) | 180V |
| Emitter Base Voltage (VEBO) | 6V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
