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2SC4213-A(TE85L,F)

2SC4213-A(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-2SC4213-A(TE85L,F)
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 535
  • Description: 2SC4213-A(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi (Kg)

Details

Tags

Parameters
Frequency 30MHz
Number of Elements 1
Element Configuration Single
Power Dissipation 100mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 4mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 100mV @ 3mA, 30A
Current - Collector (Ic) (Max) 300mA
Collector Emitter Saturation Voltage 100mV
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 25V
Height 900μm
Length 2mm
Width 1.25mm
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Max Power Dissipation 100mW
Reach Compliance Code unknown
See Relate Datesheet

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