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2SC5065-Y(TE85L,F)

Bipolar Transistors - BJT Radio-Freq Bipolar 30mA 100mW 12V


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-2SC5065-Y(TE85L,F)
  • Package: SC-70, SOT-323
  • Datasheet: -
  • Stock: 730
  • Description: Bipolar Transistors - BJT Radio-Freq Bipolar 30mA 100mW 12V (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Reach Compliance Code unknown
Element Configuration Single
Power - Max 100mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA 5V
Collector Emitter Breakdown Voltage 12V
Gain 12dB ~ 17dB
Max Breakdown Voltage 12V
Frequency - Transition 7GHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 80
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
RoHS Status RoHS Compliant
See Relate Datesheet

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