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2SC5084-O(TE85L,F)

Bipolar Transistors - BJT Radio-Freq Bipolar 80mA 150mW 12V


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-2SC5084-O(TE85L,F)
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: -
  • Stock: 556
  • Description: Bipolar Transistors - BJT Radio-Freq Bipolar 80mA 150mW 12V (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOW NOISE
Subcategory Other Transistors
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code unknown
JESD-30 Code R-PDSO-G3
Number of Elements 1
Element Configuration Single
Power - Max 150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 7 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA 10V
Collector Emitter Breakdown Voltage 12V
Gain 11dB
Transition Frequency 7000MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 80
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 1.15pF
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
RoHS Status RoHS Compliant
See Relate Datesheet

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