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2SC5085-Y(TE85L,F)

Trans GP BJT NPN 12V 0.08A 3-Pin SOT-23 Emboss T/R


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-2SC5085-Y(TE85L,F)
  • Package: SC-70, SOT-323
  • Datasheet: -
  • Stock: 617
  • Description: Trans GP BJT NPN 12V 0.08A 3-Pin SOT-23 Emboss T/R (Kg)

Details

Tags

Parameters
Collector Emitter Breakdown Voltage 12V
Gain 11dB ~ 16.5dB
Transition Frequency 5000MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 80
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Max Power Dissipation 100mW
Element Configuration Single
Power - Max 100mW
Gain Bandwidth Product 7 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 20mA 10V
See Relate Datesheet

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