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2SC5095-R(TE85L,F)

Trans Gp Bjt NPN 10V 0.015A 3-PIN Usm T/r


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-2SC5095-R(TE85L,F)
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 108
  • Description: Trans Gp Bjt NPN 10V 0.015A 3-PIN Usm T/r (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Subcategory Other Transistors
Max Power Dissipation 100mW
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power - Max 100mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 10 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 10V
Max Collector Current 15mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 7mA 6V
Collector Emitter Breakdown Voltage 10V
Gain 13dB ~ 7.5dB
Transition Frequency 10000MHz
Max Breakdown Voltage 10V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 1.5V
hFE Min 50
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.85pF
Noise Figure (dB Typ @ f) 1.8dB @ 2GHz
RoHS Status RoHS Compliant
See Relate Datesheet

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