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2SC5200-O(Q)

2SC5200-O(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-2SC5200-O(Q)
  • Package: TO-3PL
  • Datasheet: -
  • Stock: 637
  • Description: 2SC5200-O(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi (Kg)

Details

Tags

Parameters
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage 230V
Collector Base Voltage (VCBO) 230V
Emitter Base Voltage (VEBO) 5V
hFE Min 80
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Copper, Silver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3PL
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 230V
Max Power Dissipation 150W
Current Rating 15A
Frequency 30MHz
Base Part Number 2SC5200
Number of Elements 1
Element Configuration Single
Power Dissipation 150W
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 230V
See Relate Datesheet

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