banner_page

2SC5359-O(Q)

2SC5359-O(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-2SC5359-O(Q)
  • Package: TO-3PL
  • Datasheet: PDF
  • Stock: 808
  • Description: 2SC5359-O(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3PL
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 180W
Frequency 30MHz
Number of Elements 1
Element Configuration Single
Power Dissipation 180W
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 230V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage 230V
Collector Emitter Saturation Voltage 3V
Collector Base Voltage (VCBO) 230V
Emitter Base Voltage (VEBO) 5V
hFE Min 80
Height 26mm
Length 20.5mm
Width 5.2mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good