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2SC5509-T2-A

RF Bipolar Transistors NPN High Frequency


  • Manufacturer: CEL
  • Nocochips NO: 130-2SC5509-T2-A
  • Package: SOT-343F
  • Datasheet: -
  • Stock: 460
  • Description: RF Bipolar Transistors NPN High Frequency (Kg)

Details

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Parameters
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-343F
Number of Pins 4
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 190mW
Power - Max 190mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 3.3V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 2V
Collector Emitter Breakdown Voltage 3.3V
Gain 14dB
Max Breakdown Voltage 3.3V
Frequency - Transition 15GHz
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 1.5V
Noise Figure (dB Typ @ f) 1.2dB @ 2GHz
Height 590μm
Length 2mm
Width 1.25mm
RoHS Status RoHS Compliant
See Relate Datesheet

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