Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Copper, Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
JESD-609 Code | e2 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Terminal Finish | Tin/Copper (Sn/Cu) |
HTS Code | 8541.21.00.75 |
Subcategory | Other Transistors |
Voltage - Rated DC | 11V |
Max Power Dissipation | 150mW |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 50mA |
Time@Peak Reflow Temperature-Max (s) | 10 |
Base Part Number | 2SC5662 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 150mW |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 3.2 GHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 11V |
Max Collector Current | 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA 10V |
Current - Collector Cutoff (Max) | 500nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 10mA |
Collector Emitter Breakdown Voltage | 11V |
Transition Frequency | 3200MHz |
Collector Emitter Saturation Voltage | 500mV |
Max Breakdown Voltage | 11V |
Collector Base Voltage (VCBO) | 20V |
Emitter Base Voltage (VEBO) | 3V |
hFE Min | 56 |
Continuous Collector Current | 50mA |
Highest Frequency Band | S B |
Collector-Base Capacitance-Max | 1.5pF |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |