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2SC5707-E

2SC5707-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-2SC5707-E
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 315
  • Description: 2SC5707-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Collector Emitter Saturation Voltage 110mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 9 hours ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2001
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 1W
Frequency 330MHz
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Gain Bandwidth Product 330MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 240mV @ 175mA, 3.5A
Collector Emitter Breakdown Voltage 50V
See Relate Datesheet

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