Parameters | |
---|---|
Collector Emitter Saturation Voltage | 110mV |
Max Breakdown Voltage | 50V |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 200 |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 9 hours ago) |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Bulk |
Published | 2001 |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Max Power Dissipation | 1W |
Frequency | 330MHz |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1W |
Gain Bandwidth Product | 330MHz |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 50V |
Max Collector Current | 8A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 240mV @ 175mA, 3.5A |
Collector Emitter Breakdown Voltage | 50V |