2SC6017-E
| Parameters | |
|---|---|
| Collector Emitter Voltage (VCEO) | 360mV |
| Max Collector Current | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A 2V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 360mV @ 250mA, 5A |
| Collector Emitter Breakdown Voltage | 50V |
| Current - Collector (Ic) (Max) | 10A |
| Collector Emitter Saturation Voltage | 180mV |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 200 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 1 week ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2012 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Max Power Dissipation | 950mW |
| Reach Compliance Code | not_compliant |
| Pin Count | 3 |
| Element Configuration | Single |
| Gain Bandwidth Product | 200MHz |
| Transistor Type | NPN |
See Relate Datesheet
