Parameters | |
---|---|
Max Collector Current | 10A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 270mA 2V |
Current - Collector Cutoff (Max) | 10μA ICBO |
JEDEC-95 Code | TO-220AB |
Vce Saturation (Max) @ Ib, Ic | 360mV @ 300mA, 6A |
Collector Emitter Breakdown Voltage | 50V |
Transition Frequency | 330MHz |
Max Breakdown Voltage | 50V |
Frequency - Transition | 330MHz |
Collector Base Voltage (VCBO) | 60V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 200 |
Continuous Collector Current | 10A |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Published | 2007 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Max Power Dissipation | 25W |
Terminal Position | SINGLE |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE |
Case Connection | ISOLATED |
Transistor Application | SWITCHING |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 360mV |