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2SD1207S-AE

2SD1207S-AE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-2SD1207S-AE
  • Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Datasheet: PDF
  • Stock: 592
  • Description: 2SD1207S-AE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins 3
Supplier Device Package 3-MP
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1W
Base Part Number 2SD1207
Polarity NPN
Element Configuration Single
Power - Max 1W
Gain Bandwidth Product 150MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 2A
Max Frequency 1MHz
Collector Emitter Saturation Voltage 150mV
Max Breakdown Voltage 50V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
Height 8.5mm
Length 6mm
Width 4.7mm
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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