Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Copper, Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 1999 |
JESD-609 Code | e2 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Terminal Finish | TIN COPPER |
Subcategory | Other Transistors |
Voltage - Rated DC | 50V |
Max Power Dissipation | 15W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 3A |
Frequency | 90MHz |
Time@Peak Reflow Temperature-Max (s) | 10 |
Base Part Number | 2SD1760 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 15W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 90MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 50V |
Max Collector Current | 3A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA 3V |
Current - Collector Cutoff (Max) | 1μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
Collector Emitter Breakdown Voltage | 50V |
Transition Frequency | 90MHz |
Max Breakdown Voltage | 50V |
Collector Base Voltage (VCBO) | 60V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 180 |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |