Parameters | |
---|---|
Frequency | 180MHz |
Base Part Number | 2SD1816 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1W |
Case Connection | COLLECTOR |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 130MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 100V |
Max Collector Current | 4A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA 5V |
Current - Collector Cutoff (Max) | 1μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
Collector Emitter Breakdown Voltage | 100V |
Transition Frequency | 180MHz |
Collector Base Voltage (VCBO) | 120V |
Emitter Base Voltage (VEBO) | 6V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
Contact Plating | Tin |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Bulk |
Published | 2012 |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Max Power Dissipation | 1W |
Reach Compliance Code | not_compliant |