Parameters | |
---|---|
Contact Plating | Copper, Silver, Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | 3-SIP |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Box (TB) |
Published | 2004 |
JESD-609 Code | e1 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 0.0857 |
HTS Code | 8541.29.00.75 |
Subcategory | Other Transistors |
Voltage - Rated DC | 60V |
Max Power Dissipation | 1W |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 2A |
Time@Peak Reflow Temperature-Max (s) | 10 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Polarity | NPN |
Element Configuration | Single |
Transistor Application | SWITCHING |
Transistor Type | NPN - Darlington |
Collector Emitter Voltage (VCEO) | 70V |
Max Collector Current | 2A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A 2V |
Current - Collector Cutoff (Max) | 1μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
Collector Emitter Breakdown Voltage | 60V |
Transition Frequency | 80MHz |
Collector Base Voltage (VCBO) | 70V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 1000 |
VCEsat-Max | 1.5 V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |