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2SD1918TLQ

2SD1918TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-2SD1918TLQ
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: -
  • Stock: 665
  • Description: 2SD1918TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Power - Max 10W
Transistor Application SWITCHING
Gain Bandwidth Product 80MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 100mA, 1A
Collector Emitter Breakdown Voltage 160V
Transition Frequency 80MHz
Max Breakdown Voltage 160V
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Continuous Collector Current 1.5A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1999
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn98Cu2)
HTS Code 8541.29.00.75
Subcategory Other Transistors
Voltage - Rated DC 160V
Max Power Dissipation 1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1.5A
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SD1918
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
See Relate Datesheet

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