Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Copper, Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
JESD-609 Code | e2 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Copper (Sn/Cu) |
HTS Code | 8541.21.00.75 |
Subcategory | Other Transistors |
Voltage - Rated DC | 25V |
Max Power Dissipation | 2W |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | not_compliant |
Current Rating | 2A |
Time@Peak Reflow Temperature-Max (s) | 10 |
Base Part Number | 2SD2153 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-F3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 110MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 25V |
Max Collector Current | 2A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 820 @ 500mA 6V |
Current - Collector Cutoff (Max) | 500nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 20mA, 1A |
Collector Emitter Breakdown Voltage | 25V |
Transition Frequency | 110MHz |
Max Breakdown Voltage | 25V |
Collector Base Voltage (VCBO) | 30V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 560 |
Continuous Collector Current | 2A |
VCEsat-Max | 0.5 V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |