2SD2170T100
| Parameters | |
|---|---|
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| Additional Feature | BUILT-IN BIAS RESISTOR |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 90V |
| Max Power Dissipation | 2W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SD2170 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-F3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 80MHz |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 110V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A 2V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Collector Emitter Breakdown Voltage | 90V |
| Transition Frequency | 80MHz |
| Max Breakdown Voltage | 90V |
| Collector Base Voltage (VCBO) | 110V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 1000 |
| Continuous Collector Current | 2A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
