2SD2211T100Q
| Parameters | |
|---|---|
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN COPPER |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 160V |
| Max Power Dissipation | 2W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 1.5A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-F3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 80MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 160V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Base Voltage (VCBO) | 160V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 120 |
| Continuous Collector Current | 1.5A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
