2SD2389
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 1999 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | BUILT-IN BIAS RESISTOR |
| Subcategory | Other Transistors |
| Max Power Dissipation | 80W |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | DARLINGTON WITH BUILT-IN RESISTOR |
| Power - Max | 80W |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 2.5V |
| Max Collector Current | 8A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 6A 4V |
| Current - Collector Cutoff (Max) | 100μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 6mA, 6A |
| Collector Emitter Breakdown Voltage | 150V |
| Transition Frequency | 80MHz |
| Frequency - Transition | 80MHz |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
