2SD2701TL
| Parameters | |
|---|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 50mA, 1A |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 140mV |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | 15V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 270 |
| Continuous Collector Current | 2A |
| Height | 770μm |
| Length | 2mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, Flat Lead |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 12V |
| Max Power Dissipation | 800mW |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2A |
| Frequency | 300MHz |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SD2701 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 800mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 2A |
See Relate Datesheet
