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2SD2701TL

2SD2701TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-2SD2701TL
  • Package: 3-SMD, Flat Lead
  • Datasheet: PDF
  • Stock: 345
  • Description: 2SD2701TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 140mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Continuous Collector Current 2A
Height 770μm
Length 2mm
Width 1.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Voltage - Rated DC 12V
Max Power Dissipation 800mW
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SD2701
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 800mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 2A
See Relate Datesheet

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