Parameters | |
---|---|
Collector Base Voltage (VCBO) | 30V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 270 |
Height | 820μm |
Length | 2.1mm |
Width | 1.8mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Copper, Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Lead |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
JESD-609 Code | e2 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | TIN COPPER |
HTS Code | 8541.21.00.75 |
Subcategory | Other Transistors |
Max Power Dissipation | 800mW |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 10 |
Base Part Number | 2SD2703 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 320MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 30V |
Max Collector Current | 1A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 100mA 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 350mV @ 25mA, 500mA |
Collector Emitter Breakdown Voltage | 30V |
Max Frequency | 100MHz |
Transition Frequency | 320MHz |
Collector Emitter Saturation Voltage | 120mV |
Max Breakdown Voltage | 30V |