2SJ652-1E
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Reach Compliance Code | not_compliant |
| Power Dissipation-Max | 2W Ta 30W Tc |
| Element Configuration | Single |
| Turn On Delay Time | 33 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 38m Ω @ 14A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4360pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 28A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| Rise Time | 210ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 180 ns |
| Turn-Off Delay Time | 310 ns |
| Continuous Drain Current (ID) | 28A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -60V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
