Parameters | |
---|---|
Drain Current-Max (Abs) (ID) | 7A |
Voltage - Rated DC | 160V |
Drain to Source Breakdown Voltage | 160V |
Technology | MOSFET (Metal Oxide) |
Height | 22.1mm |
Terminal Position | SINGLE |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Current Rating | 7A |
Lead Free | Lead Free |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 100W Tc |
Factory Lead Time | 1 Week |
Contact Plating | Copper, Tin |
Operating Mode | ENHANCEMENT MODE |
Mount | Through Hole |
Mounting Type | Through Hole |
Power Dissipation | 100W |
Package / Case | TO-3P-3, SC-65-3 |
Case Connection | SOURCE |
Number of Pins | 3 |
Turn On Delay Time | 180 ns |
Transistor Element Material | SILICON |
Manufacturer Package Identifier | PRSS0004ZE-A |
FET Type | N-Channel |
Operating Temperature | 150°C TJ |
Transistor Application | SWITCHING |
Packaging | Tube |
Published | 2005 |
Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 10V |
Pbfree Code | yes |
Current - Continuous Drain (Id) @ 25°C | 7A Ta |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Vgs (Max) | ±15V |
Number of Terminations | 3 |
Turn-Off Delay Time | 60 ns |
ECCN Code | EAR99 |
Continuous Drain Current (ID) | 7A |
Subcategory | FET General Purpose Power |
Gate to Source Voltage (Vgs) | 15V |