Parameters | |
---|---|
FET Technology | JUNCTION |
Power Dissipation-Max (Abs) | 0.15W |
Current - Drain (Idss) @ Vds (Vgs=0) | 12mA @ 5V |
Voltage - Cutoff (VGS off) @ Id | 0V @ 10μA |
Voltage - Breakdown (V(BR)GSS) | 22V |
Current Drain (Id) - Max | 50mA |
RoHS Status | RoHS Compliant |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | 150°C |
Packaging | Tape & Reel (TR) |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PDSO-G3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | DEPLETION MODE |
Power - Max | 150mW |
FET Type | N-Channel |
Transistor Application | AMPLIFIER |
Input Capacitance (Ciss) (Max) @ Vds | 9pF @ 5V |