Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Copper, Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Published | 2008 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 125W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 25 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7 Ω @ 2A, 15V |
Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 4A Ta |
Rise Time | 80ns |
Drain to Source Voltage (Vdss) | 1500V |
Drive Voltage (Max Rds On,Min Rds On) | 15V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 80 ns |
Turn-Off Delay Time | 230 ns |
Continuous Drain Current (ID) | 4A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 4A |
Drain-source On Resistance-Max | 7Ohm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |