Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2000 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 450mOhm |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 2A |
Time@Peak Reflow Temperature-Max (s) | 10 |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 500mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 500mW |
Case Connection | DRAIN |
Turn On Delay Time | 20 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 320m Ω @ 1A, 4V |
Vgs(th) (Max) @ Id | 1.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 2A Ta |
Rise Time | 50ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 70 ns |
Turn-Off Delay Time | 120 ns |
Continuous Drain Current (ID) | 2A |
Threshold Voltage | 800mV |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 2A |
Drain to Source Breakdown Voltage | 60V |
Nominal Vgs | 800 mV |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |