Parameters | |
---|---|
Pin Count | 3 |
Drain to Source Breakdown Voltage | 1.5kV |
Number of Elements | 1 |
Pulsed Drain Current-Max (IDM) | 4A |
Power Dissipation-Max | 2W Ta 35W Tc |
Height | 15.87mm |
Element Configuration | Single |
Length | 10.16mm |
Width | 4.7mm |
Operating Mode | ENHANCEMENT MODE |
Radiation Hardening | No |
Power Dissipation | 2W |
RoHS Status | ROHS3 Compliant |
Case Connection | ISOLATED |
Lead Free | Lead Free |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 13 Ω @ 1A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 2A Ta |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Gate Charge (Qg) (Max) @ Vgs | 37.5nC @ 10V |
Mounting Type | Through Hole |
Rise Time | 37ns |
Package / Case | TO-220-3 Full Pack |
Surface Mount | NO |
Drain to Source Voltage (Vdss) | 1500V |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Operating Temperature | 150°C TJ |
Vgs (Max) | ±20V |
Packaging | Tube |
Fall Time (Typ) | 59 ns |
Published | 1997 |
JESD-609 Code | e3 |
Turn-Off Delay Time | 152 ns |
Pbfree Code | yes |
Part Status | Not For New Designs |
Continuous Drain Current (ID) | 2A |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
JEDEC-95 Code | TO-220AB |
Additional Feature | HIGH RELIABILITY |
Technology | MOSFET (Metal Oxide) |
Gate to Source Voltage (Vgs) | 20V |