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2SK4017(Q)

TOSHIBA 2SK4017(Q) MOSFET Transistor, N Channel, 5 A, 60 V, 100 mohm, 10 V, 2.5 V


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-2SK4017(Q)
  • Package: TO-251-3 Stub Leads, IPak
  • Datasheet: PDF
  • Stock: 833
  • Description: TOSHIBA 2SK4017(Q) MOSFET Transistor, N Channel, 5 A, 60 V, 100 mohm, 10 V, 2.5 V (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Silver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2009
Series U-MOSIII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 20W Tc
Element Configuration Single
Power Dissipation 20W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 730pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Nominal Vgs 2.5 V
Height 5.5mm
Length 6.5mm
Width 2.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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