Parameters | |
---|---|
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Bulk |
Published | 2007 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
Additional Feature | HIGH RELIABILITY |
HTS Code | 8541.29.00.95 |
Technology | MOSFET (Metal Oxide) |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 2W Ta 40W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Turn On Delay Time | 27 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 720m Ω @ 6A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 8.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 45.4nC @ 10V |
Rise Time | 66ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 45 ns |
Turn-Off Delay Time | 140 ns |
Continuous Drain Current (ID) | 12A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 30V |
Drain-source On Resistance-Max | 0.72Ohm |
Drain to Source Breakdown Voltage | 650V |
Pulsed Drain Current-Max (IDM) | 48A |
Avalanche Energy Rating (Eas) | 84 mJ |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |