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2SK4124-1E

MOSFET N-CH Pwr MOSFET 500V 20A 430mOhm


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-2SK4124-1E
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 403
  • Description: MOSFET N-CH Pwr MOSFET 500V 20A 430mOhm (Kg)

Details

Tags

Parameters
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 58 ns
Turn-Off Delay Time 145 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 30V
RoHS Status RoHS Compliant
Lead Free Lead Free
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Surface Mount NO
Number of Pins 3
Weight 6.961991g
Operating Temperature 150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Channels 1
Power Dissipation-Max 2.5W Ta 170W Tc
Element Configuration Single
Turn On Delay Time 26.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 430m Ω @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 30V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 46.6nC @ 10V
Rise Time 95ns
See Relate Datesheet

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