Parameters | |
---|---|
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta 170W Tc |
Element Configuration | Single |
Power Dissipation | 2.5W |
Turn On Delay Time | 26.5 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 610m Ω @ 7A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 17A Ta |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Rise Time | 82ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 52 ns |
Turn-Off Delay Time | 145 ns |
Continuous Drain Current (ID) | 17A |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 600V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Contact Plating | Tin |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Surface Mount | NO |
Number of Pins | 3 |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Published | 2013 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |