Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tray |
Published | 2009 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
HTS Code | 8541.29.00.95 |
Technology | MOSFET (Metal Oxide) |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta 220W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Turn On Delay Time | 44 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 240m Ω @ 13A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 26A Ta |
Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
Rise Time | 156ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 94 ns |
Turn-Off Delay Time | 224 ns |
Continuous Drain Current (ID) | 26A |
Gate to Source Voltage (Vgs) | 30V |
Drain-source On Resistance-Max | 0.24Ohm |
Drain to Source Breakdown Voltage | 500V |
Pulsed Drain Current-Max (IDM) | 90A |
Avalanche Energy Rating (Eas) | 608 mJ |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |