Parameters | |
---|---|
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Max Power Dissipation | 200W |
Frequency | 25MHz |
Base Part Number | 2STA |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 200W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 25MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 250V |
Max Collector Current | 17A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A 5V |
Current - Collector Cutoff (Max) | 5μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
Collector Emitter Breakdown Voltage | 250V |
Transition Frequency | 25MHz |
Collector Emitter Saturation Voltage | 3V |
Collector Base Voltage (VCBO) | 250V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 80 |
Height | 18.7mm |
Length | 15.8mm |
Width | 5mm |