Parameters | |
---|---|
Operating Temperature | 150°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Max Power Dissipation | 100W |
Peak Reflow Temperature (Cel) | 260 |
Frequency | 20MHz |
Base Part Number | 2STC |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 100W |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 20MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 140V |
Max Collector Current | 10A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 3A 4V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 700mV @ 700mA, 7A |
Collector Emitter Breakdown Voltage | 140V |
Transition Frequency | 20MHz |
Max Breakdown Voltage | 140V |
Collector Base Voltage (VCBO) | 200V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 70 |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |