Parameters | |
---|---|
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 500mW |
Transistor Application | SWITCHING |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 30V |
Max Collector Current | 1.5A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 850mV @ 200mA, 2A |
Collector Emitter Breakdown Voltage | 30V |
Collector Emitter Saturation Voltage | 850mV |
Max Breakdown Voltage | 30V |
Collector Base Voltage (VCBO) | 30V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 210 |
Height | 950μm |
Length | 2.9mm |
Width | 1.3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | 30V |
Max Power Dissipation | 500mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 1.5A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | 2STR |